NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES Trans GP BJT NPN 60V 15A 3-Pin(2+Tab) TO-3 Sleeve 60V Vceo, 15.000A Ic, 5 hFEġ5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTSġ5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS _ylt=A0LEVxQ.115.000W Power NPN Metal Can Transistor.They were used extensively in the former Eastern Bloc countries in audio power amplifier s made by Czechoslovakian Tesla and Polish Unitra. The KD503 have higher power and higher current than 2n3055. NPN, silicon transistor Metal Package Max Collector Continuous Current: 15 A Max Collector-Emitter Voltage: 70. It has a Gain–bandwidth product with a transistors transition frequency of 2.0 MHz. KD503 are packaged in a TO-3 case style (called T41 by Tesla), it is a 20 ampere (amp), 80 volt, 150 watt power transistor. It was produced exclusively by the Czechoslovakian electronics company Tesla. KD503 is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications.In many cases a TO-220 packaged version, such as MJE3055T, can be used instead of the 2N3054 as well as in some 2N3055 applications. The 2N3054 is a much lower power version of the 2N3055, rated at 25 W, 55 V and 4 A, but became almost obsolete about the late 1980s when many TO-66 devices were withdrawn from mainstream manufacturers's lists.The 2N3773, with a TO-3 case has slightly lower gain but significantly higher maximum ratings (150W, 140Vceo, 16 Amps).The 10 Amp (15 Amp peak), 80 Watt TIP33 (NPN) and TIP34 (NPN) are plastic-cased transistors with somewhat similar characteristics to the 2N3055 and MJ2955 respectively, and available in variants with 40/60/80/100 V ceo breakdown voltage ratings.A TO-3 P (plastic case) version of the 2N3055 and its complementary device MJ2955 are available as the TIP3055 and TIP2955 respectively, with slightly reduced power dissipation ratings.In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 (described as being for "hifi" purposes) and BDY38 (although the BDY38 has lower voltage ratings than the 2N3055).An MJ2955 ( PNP transistor|PNP ), which is also manufactured using the epitaxial process today, is a complementary transistor to the 2N3055.
steel, aluminium, or plastic with metal tab), and other variations exist, in addition to the minor variations in ratings (such as a power dissipation of 115 or 117 Watts) between 2N3055-marked devices from various manufacturers since RCA's original. 2N3055HV, with a 100V ceo rating), different case material or type (e.g. Variants with higher voltage ratings (e.g. Author: Mataresephotos.Ī Tesla KD503 transistor. Author: Rolf Süssbrich Rsuessrb.ĢN3055 transistors have several applications in power circuits, including inverters and voltage regulators. The frequency at which gain begins to drop off may be much lower, see below.Ī 2N3055 transistor's internals. Abstract: 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts. It often has a transition frequency of around 3.0 MHz and 6 MHz is typical for the 2N3055A at this frequency the calculated current gain (beta) drops to 1, indicating the transistor can no longer provide useful amplification in common emitter configuration. Packaged in a TO-3 case style, it is a 15 amp, 60 volt, 115 watt power transistor with a β (forward current gain) of 20 to 70 at a collector current of 4 A (this may be 100 to 200 when testing using a multimeter). The exact performance characteristics depend on the manufacturer and date before the move to the epitaxial base version in the mid-1970s the fT could be as low as 0.8 MHz, for example.
It had 2 holse in the side flanges so it could be screwed in to a mica, epoxy, rubber or plastic insulator and then a metal heat sink. Its numbering follows the JEDEC standard.It is a transistor type of enduring popularity. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. The 2N3055 is a silicon NPN power transistor intended for general purpose applications.
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